Feature of Hafnium dioxide HfO2 powder : Hafnium dioxide (HfO2) is a ceramic material with wide band gap and high dielectric constant, which has recently attracted much attention in the industry, especially in the field of microelectronics, because it is most likely to replace the core devices of the current silicon-based integrated circuits (MOSFET) gate insulation layer of silicon dioxide (SiO2) to solve the current MOSFET in the development of traditional SiO2 structure of the size limit problem,as is a wide band gap (~ 6eV) and high dielectric Constant ceramic material.

Metal powders

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