OPSIL LTD - Monocrystalline Silicon

Resistance for mirrors

We produce targets, both single pieces and complete sets Resistance – as per customer’s specifications

Full square 100х100 from Ф 135 mmPseudo-square 100х100 from Ф125 mm Pseudo-square 125х125 from Ф150 mm

Wafer thickness(μm) standard >350 >400 >440 >500 minimum 300 350 380 420 Through-the-thickness accuracy(μm) standard ±15 ±20 ±20 ±20 Thickness deviation TTV (μm) maximum 10 15 20 25 standard <7 <10 <10 <12 ИWafer warp (μm) maximum 30 35 40 45 standard <15 <15 <20 <25

The company is technologically capable of slicing of thin wafers from optical glass and semi-precious stones.

We have got 3 pulling machins for monocrystalline Silicon by the Czochralski method with maximum diameter Ф165 mm. Production capacity – 1500 kg/month. Materials and consumables from proven producers in the industry are used in our production, which guarantees the production of crystals with required purity and properties. Our extensive production experience, in a combination with application of state-of-the-art technologies and practices, allows us to produce crystals of high purity and quality meeting the requirements of our customers.

After having pulled the crystal out, it is placed in the sawing machine, where the initial and the end cone are being cut out. Thereafter, the cylindrical part is cut-to-length, as requested. Diamond discs for peripheral sawing are used for cutting.

Depending on the customers’ orders, the crystals are being ground on the outside diameter of a diamond peripheral sawing disk. We have got three centre grinders with a total monthly capacity 2000 kg. Maximum ground diameter – Ф200 mm. Accuracy 0.03 mm. Surface roughness - Ra ˂ 0.25.

After the surface grinding, the crystal is sliced into wafers with a thickness according to customer’s specifications. Sawing machines with diamond impregnated blade are used for the slicing. We have got 5 sawing machines with a monthly capacity 2500 kg. Maximum diameter Ф152 mm. Wafer thickness up to 80 mm. Slicing accuracy ± 25 microns.